GT60N321(Q)

toshiba

GT60N321(Q) Specifications:

SpecificationsParameters
Package3TO-3P(LH)
ConfigurationSingle
Maximum Collector Emitter Voltage1000 V
Maximum Continuous Collector Current60 A
Maximum Gate Emitter Voltage±25 V
MountingThrough Hole
Standard PackageBulk
Current - Collector (Ic) (Max)60A
Mounting TypeThrough Hole
Td (on/off) @ 25°C330ns/700ns
Vce(on) (Max) @ Vge, Ic2.8V @ 15V, 60A
Voltage - Collector Emitter Breakdown (Max)1000V
Supplier Device PackageTO-3P(LH)
Reverse Recovery Time (trr)800ns
PackagingTube
Power - Max170W
Input TypeStandard
Package / CaseTO-3PL
Current - Collector Pulsed (Icm)120A
rohsLead free / RoHS Compliant
Collector Current (DC) (Max)60 A
Collector-Emitter Voltage1000 V
Package TypeTO-3P(LH)
Pin Count3
Operating Temperature (Max)150C
Operating Temperature (Min)-55C
Operating Temperature ClassificationMilitary
Channel TypeN
Gate to Emitter Voltage (Max)�25 V
Rad HardenedNo
DELETEDCompliant
Collector Current (DC)60 A

GT60N321(Q) Description:

  • Trans IGBT Chip N-CH 1KV 60A 3-Pin TO-3P(LH)
  • IGBT 1000V 60A 170W TO3P LH

    GT60N321(Q) datasheet:

  • GT60N321

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