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GT60N321(Q)

  • Manufacturer: toshiba
  • Stock Quantity:0
  • Description:Trans IGBT Chip N-CH 1KV 60A 3-Pin TO-3P(LH)
  • Rohs:Lead free / RoHS Compliant
  • Datasheet: Datasheet
  • Specification
Package 3TO-3P(LH)
Configuration Single
Maximum Collector Emitter Voltage 1000 V
Maximum Continuous Collector Current 60 A
Maximum Gate Emitter Voltage ±25 V
Mounting Through Hole
Standard Package Bulk
Current - Collector (Ic) (Max) 60A
Mounting Type Through Hole
Td (on/off) @ 25°C 330ns/700ns
Vce(on) (Max) @ Vge, Ic 2.8V @ 15V, 60A
Voltage - Collector Emitter Breakdown (Max) 1000V
Supplier Device Package TO-3P(LH)
Reverse Recovery Time (trr) 800ns
Packaging Tube
Power - Max 170W
Input Type Standard
Package / Case TO-3PL
Current - Collector Pulsed (Icm) 120A
rohs Lead free / RoHS Compliant
Collector Current (DC) (Max) 60 A
Collector-Emitter Voltage 1000 V
Package Type TO-3P(LH)
Pin Count 3
Operating Temperature (Max) 150C
Operating Temperature (Min) -55C
Operating Temperature Classification Military
Channel Type N
Gate to Emitter Voltage (Max) �25 V
Rad Hardened No
DELETED Compliant
Collector Current (DC) 60 A
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